High switching frequency amplifier of IGBT for disruption feedback control systems

Author

Matsuzaki, Y. ; Omori, K. ; Shimada, R. ; Minami, Kazuyuki ; Ozaki, A. ; Higa, O. ; Kawashima, S.

Author_Institution

JAERI, Ibaraki, Japan

fYear

1989

fDate

2-6 Oct 1989

Firstpage

89

Abstract

High-power, high-switching-frequency amplifiers have been developed for stabilizing the m=2/n=1 MHD (magnetohydrodynamic) mode of plasma in the JFT-2M to avoid plasma disruptions. The amplifiers are a set of two inverters (INV 1 and INV 2). Each inverter has a current of 1500 A, a voltage of 500 V, and a switching frequency of 20 kHz. The component device of the inverter is an IGBT (insulated gate bipolar transistor) MG300N1US1. Each inverter has three bridges composed of eight IGBTs with eight high-speed free-wheeling diodes, respectively. Controllers of the inverters are made by the PWM (pulse width modulation) method and directly operated by voltage references E_c. In the test operations, each inverter operated in the switching frequency of 20 kHz, and the maximum sine-wave current of +1500 A--1500 A at the 60-Hz reference signals

Keywords

Tokamak devices; fission reactor instrumentation; fusion reactor theory and design; insulated gate bipolar transistors; plasma instability; plasma magnetohydrodynamics; 1500 A; 500 V; IGBT; JFT-2M; high-speed free-wheeling diodes; high-switching-frequency amplifiers; insulated gate bipolar transistor; plasma disruptions; pulse width modulation; switching frequency; Bridge circuits; Diodes; Feedback; High power amplifiers; Insulated gate bipolar transistors; Magnetohydrodynamics; Plasma devices; Pulse width modulation inverters; Switching frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Fusion Engineering, 1989. Proceedings., IEEE Thirteenth Symposium on

Conference_Location

Knoxville, TN

Type

conf

DOI

10.1109/FUSION.1989.102178

Filename

102178