Very Low Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators

Author

Shin, JaeHyuk ; Chang, Yu-Chia ; Dagli, Nadir

Author_Institution

California Univ., Santa Barbara

fYear

2007

fDate

3-5 Oct. 2007

Firstpage

160

Lastpage

163

Abstract

Mach-Zehnder intensity modulators with 0.3 V drive voltage were realized using very strongly confined GaAs/AlGaAs submicron waveguides based on substrate removal techniques. The device uses doped quantum wells as buried electrodes and its electrode is only 7 mm long. The modulation is due to very efficient use of linear electro-optic and carrier depletion effects and has high speed potential.

Keywords

III-V semiconductors; aluminium compounds; electro-optical effects; electro-optical modulation; electrodes; gallium arsenide; optical waveguides; semiconductor quantum wells; GaAs-AlGaAs; Mach-Zehnder intensity modulators; buried electrodes; carrier depletion effects; doped quantum wells; drive voltage substrate; electro-optic modulators; linear electro-optic effects; size 7 mm; submicron waveguides; substrate removal techniques; voltage 0.3 V; Arm; Electrodes; Electrooptic modulators; Gallium arsenide; Intensity modulation; Low earth orbit satellites; Low voltage; Optical interferometry; Optical modulation; Optical waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2007 IEEE International Topical Meeting on

Conference_Location

Victoria, BC

Print_ISBN

978-1-4244-1167-2

Electronic_ISBN

978-1-4244-1168-9

Type

conf

DOI

10.1109/MWP.2007.4378162

Filename

4378162