Title :
Very Low Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators
Author :
Shin, JaeHyuk ; Chang, Yu-Chia ; Dagli, Nadir
Author_Institution :
California Univ., Santa Barbara
Abstract :
Mach-Zehnder intensity modulators with 0.3 V drive voltage were realized using very strongly confined GaAs/AlGaAs submicron waveguides based on substrate removal techniques. The device uses doped quantum wells as buried electrodes and its electrode is only 7 mm long. The modulation is due to very efficient use of linear electro-optic and carrier depletion effects and has high speed potential.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; electro-optical modulation; electrodes; gallium arsenide; optical waveguides; semiconductor quantum wells; GaAs-AlGaAs; Mach-Zehnder intensity modulators; buried electrodes; carrier depletion effects; doped quantum wells; drive voltage substrate; electro-optic modulators; linear electro-optic effects; size 7 mm; submicron waveguides; substrate removal techniques; voltage 0.3 V; Arm; Electrodes; Electrooptic modulators; Gallium arsenide; Intensity modulation; Low earth orbit satellites; Low voltage; Optical interferometry; Optical modulation; Optical waveguides;
Conference_Titel :
Microwave Photonics, 2007 IEEE International Topical Meeting on
Conference_Location :
Victoria, BC
Print_ISBN :
978-1-4244-1167-2
Electronic_ISBN :
978-1-4244-1168-9
DOI :
10.1109/MWP.2007.4378162
