Optimisation of resonant tunnelling injection and doping density in high-performance THz superlattice quantum cascade lasers

Author

Barbieri, S. ; Alton, J. ; Worrall, C. ; Houghton, M. ; Beere, H.E. ; Linfield, E.H. ; Ritchie, D.A.

Author_Institution

TeraView Ltd., Cambridge, UK

Volume

2

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

551

Abstract

This study attempts to reduce the fast increase of threshold current densities J_TH with temperature by optimising the performance of a recently demonstrated superlattice QCL emitting at λ = 100 μm using different active region doping levels. In addition, this work studies the injection efficiency as a function of the thickness of the Al_0.15Ga_0.85As barrier controlling the tunnel coupling between the superlattice miniband and the upper state of the laser transition.

Keywords

III-V semiconductors; aluminium compounds; doping; gallium arsenide; laser transitions; optimisation; quantum cascade lasers; resonant tunnelling; submillimetre wave lasers; 100 mum; Al_0.15Ga_0.85As; Al_0.15Ga_0.85As barrier; THz lasers; active region doping levels; doping density; high-performance lasers; laser transition; optimisation; quantum cascade lasers; resonant tunnelling injection; superlattice lasers; superlattice miniband; tunnel coupling; Doping; Laser transitions; Optical control; Optical coupling; Quantum cascade lasers; Resonant tunneling devices; Superlattices; Temperature; Thickness control; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363357

Filename

1363357