DocumentCode
2019710
Title
On-Wafer LSNA measurements including dynamic-bias
Author
Avolio, G. ; Pailloncy, G. ; Schreurs, D. ; Bossche, Marc ; Nauwelaers, B.
Author_Institution
Div. ESAT-Telemic, K.U. Leuven, Leuven, Belgium
fYear
2009
fDate
Sept. 29 2009-Oct. 1 2009
Firstpage
930
Lastpage
933
Abstract
A novel set-up extending Large Signal Network Analyzer (LSNA) capabilities is described in this work. The new set-up allows the simultaneous on-wafer measurement of high-frequency response (600 MHz-50 GHz) and currents/voltages induced at low-frequency scale (10 kHz-24 MHz) when the nonlinear DUT is excited by a periodic modulated signal. Experiments carried out on FinFET devices are reported. It will be shown that, in certain conditions, the contribution of low-frequency information cannot be disregarded as it causes a significant discrepancy to appear in the current/voltage at the DUT terminals.
Keywords
MOSFET; frequency response; network analysers; radiofrequency measurement; FinFET devices; device under test; frequency 10 kHz to 24 MHz; frequency 600 MHz to 50 GHz; high-frequency response; large signal network analyzer; nonlinear DUT; on-wafer LSNA measurement; Bandwidth; Calibration; Current measurement; Hardware; Microwave measurements; Radio frequency; Scattering; Switches; Voltage; Wideband; characterization; large-signal measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. EuMC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4748-0
Type
conf
Filename
5296224
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