• DocumentCode
    2019749
  • Title

    On electron heating mechanism in low pressure high density inductively coupled plasma (ICP)

  • Author

    ChinWook Chung ; You, K.-I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Han Yang Univ., Seoul, South Korea
  • fYear
    2003
  • fDate
    5-5 June 2003
  • Firstpage
    349
  • Abstract
    Summary form only given, as follows. The electron heating mechanism in a low-pressure inductively coupled plasma (ICP) is investigated. Two types of resonant coupling between electrons and radio frequency electric fields are possible in low pressure ICP. The electron bounce resonance corresponding to the first resonant coupling is a dominant electron heating mechanism in a finite size ICP. We find out that the electron bounce resonance has a dependence on electron density when we calculate energy diffusion coefficients against electron density. This dependence on the electron density seems to be related to electron motion in the skin layer. The change in the electron bounce resonance is analyzed and discussed in this paper.
  • Keywords
    plasma density; plasma radiofrequency heating; plasma sources; electron bounce resonance; electron density; electron heating mechanism; electron motion; energy diffusion coefficients; finite size; high density inductively coupled plasma; low-pressure inductively coupled plasma; resonant coupling; skin layer; Collimators; Electrons; Heating; Particle beams; Plasma density; Plasma devices; Plasma diagnostics; Plasma materials processing; Plasma sources; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
  • Conference_Location
    Jeju, South Korea
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-7911-X
  • Type

    conf

  • DOI
    10.1109/PLASMA.2003.1228957
  • Filename
    1228957