DocumentCode
2019749
Title
On electron heating mechanism in low pressure high density inductively coupled plasma (ICP)
Author
ChinWook Chung ; You, K.-I.
Author_Institution
Dept. of Electr. & Comput. Eng., Han Yang Univ., Seoul, South Korea
fYear
2003
fDate
5-5 June 2003
Firstpage
349
Abstract
Summary form only given, as follows. The electron heating mechanism in a low-pressure inductively coupled plasma (ICP) is investigated. Two types of resonant coupling between electrons and radio frequency electric fields are possible in low pressure ICP. The electron bounce resonance corresponding to the first resonant coupling is a dominant electron heating mechanism in a finite size ICP. We find out that the electron bounce resonance has a dependence on electron density when we calculate energy diffusion coefficients against electron density. This dependence on the electron density seems to be related to electron motion in the skin layer. The change in the electron bounce resonance is analyzed and discussed in this paper.
Keywords
plasma density; plasma radiofrequency heating; plasma sources; electron bounce resonance; electron density; electron heating mechanism; electron motion; energy diffusion coefficients; finite size; high density inductively coupled plasma; low-pressure inductively coupled plasma; resonant coupling; skin layer; Collimators; Electrons; Heating; Particle beams; Plasma density; Plasma devices; Plasma diagnostics; Plasma materials processing; Plasma sources; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1228957
Filename
1228957
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