DocumentCode
2019768
Title
Large Signal Design of Distributed Power Amplifier with Discrete RF MOSFET Devices
Author
TeikSiew, Tan ; Ain, Mohd Fadzil ; Hassan, Syed Idris Syed
Author_Institution
Sch. of Electr. & Electron. Eng., Univ. Sains Malaysia
fYear
2006
fDate
12-14 Sept. 2006
Firstpage
58
Lastpage
61
Abstract
This paper describes the analysis of distributed power amplifier using discrete RF MOSFET devices. Large signal design is discussed where non-uniform of drain line´s characteristic impedance is employed to enhance the output power and efficiency performance. The amplifier demonstrates 1 Watt output power with 13dB associated gain and 26% of PAE over 100MHz to 600MHz frequency band
Keywords
MOSFET circuits; network synthesis; power amplifiers; 1 W; 100 to 600 MHz; 13 dB; K factor; characteristic impedance; discrete RF MOSFET devices; distributed power amplifier; large signal design; Distributed amplifiers; FETs; Impedance; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Signal design; Characteristic impedance; Distributed amplifier; K factor; Tapering;
fLanguage
English
Publisher
ieee
Conference_Titel
RF and Microwave Conference, 2006. RFM 2006. International
Conference_Location
Putra Jaya
Print_ISBN
0-7803-9744-4
Electronic_ISBN
0-7803-9745-2
Type
conf
DOI
10.1109/RFM.2006.331037
Filename
4133552
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