Title :
Applications of Gallium Nitride in power electronics
Author :
Scott, Michael James ; Jinzhu Li ; Jin Wang
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ. Columbus, Columbus, OH, USA
Abstract :
The electrical properties of Gallium Nitride (GaN) offer several advantages over Silicon (Si) for creating switching devices for power electronics. Already this emerging technology is showing improvements in power density and efficiency in certain applications. The following paper reviews the current state of the art of GaN devices. It discusses challenges in implementation, such as the mistriggers that result from dV/dt´s across the miller capacitance. It examines third quadrant operation for negative gate to source voltages. A strategy for mounting devices from Efficient Power Conversion is provided. Finally, two switched capacitor circuits are presented with experimental results. The first is a voltage doubler operating at 893 kHz with a peak power of 480 W and an efficiency of 94.4 %. The second is a three-phase, three-level inverter with preliminary test results operating at 300 kHz.
Keywords :
III-V semiconductors; capacitance; gallium compounds; power convertors; power electronics; switched capacitor networks; wide band gap semiconductors; GaN; efficiency 94.4 percent; efficient power conversion; electrical properties; frequency 300 kHz; frequency 893 kHz; miller capacitance; mounting device; negative gate; power 480 W; power density; power electronics; quadrant operation; source voltage; switched capacitor circuit; switching device; three-phase three-level inverter; voltage doubler; Capacitance; Gallium nitride; Inverters; Logic gates; Silicon; Silicon carbide; Switches;
Conference_Titel :
Power and Energy Conference at Illinois (PECI), 2013 IEEE
Conference_Location :
Champaign, IL
Print_ISBN :
978-1-4673-5601-5
DOI :
10.1109/PECI.2013.6506025
