Title :
Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation
Author :
Liang Pang ; Kyekyoon Kim
Author_Institution :
Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F- ion implantation into the 2DEG channel, while sputtered-SiO2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; ion implantation; leakage currents; plasma materials processing; two-dimensional electron gas; 2DEG channel; AlGaN-GaN; AlGaN-GaN MOSHEMT; GaN-based MOSHEMTs; bimodal-gate-oxide deposition; bimodal-gate-oxide scheme; depletion-mode counterpart; fluoride-plasma-treated bimodal-gate-oxide; gate swing; high-performance enhancement-mode; ion implantation; normally-off operation; plasma treatment; plasma-induced leakage current; Aluminum gallium nitride; Aluminum oxide; Gallium nitride; HEMTs; Logic gates; MODFETs; Plasmas; AlGaN / GaN MOSHEMT; bimodal gate-SiO2; enhancement-mode operation; fluoride-plasma treatment;
Conference_Titel :
Power and Energy Conference at Illinois (PECI), 2013 IEEE
Conference_Location :
Champaign, IL
Print_ISBN :
978-1-4673-5601-5
DOI :
10.1109/PECI.2013.6506026
