Title :
Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications
Author :
Kim, Seongsin M. ; Harris, James S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Abstract :
This study demonstrates multi-spectral operation of InGaAs quantum dot infrared photodetectors that display peak responsivity and peak detectivity at 77 K. The applications of multi-spectral infrared sensors are also discussed in detail.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor devices; semiconductor quantum dots; 77 K; InGaAs; InGaAs quantum dot; infrared photodetectors; infrared sensor applications; infrared sensors; multispectral operation; multispectral sensors; peak detectivity; peak responsivity; quantum dot photodetectors; Indium gallium arsenide; Infrared detectors; Infrared sensors; Optical scattering; Optical sensors; Photodetectors; Quantum dots; Temperature sensors; US Department of Transportation; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363380
