DocumentCode
2020249
Title
Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications
Author
Kim, Seongsin M. ; Harris, James S.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., CA, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
597
Abstract
This study demonstrates multi-spectral operation of InGaAs quantum dot infrared photodetectors that display peak responsivity and peak detectivity at 77 K. The applications of multi-spectral infrared sensors are also discussed in detail.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor devices; semiconductor quantum dots; 77 K; InGaAs; InGaAs quantum dot; infrared photodetectors; infrared sensor applications; infrared sensors; multispectral operation; multispectral sensors; peak detectivity; peak responsivity; quantum dot photodetectors; Indium gallium arsenide; Infrared detectors; Infrared sensors; Optical scattering; Optical sensors; Photodetectors; Quantum dots; Temperature sensors; US Department of Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363380
Filename
1363380
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