DocumentCode
2020281
Title
Experimental comparison of multiple quantum-well GaInNAs vertical-cavity SOAs
Author
Laurand, N. ; Calvez, S. ; Dawson, M.D. ; Bryce, A.C. ; Jouhti, T. ; Kontinnen, J. ; Pessa, M.
Author_Institution
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
599
Abstract
This paper presents the gain characterization and efficiency comparison of two reflection-format 1.3 μm GaInNAs vertical-cavity semiconductor optical amplifiers (VCSOAs) having six and fifteen quantum-wells. A maximum gain operation of 19 dB and 17 dB, respectively, is reported.
Keywords
gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; light reflection; quantum well lasers; semiconductor optical amplifiers; surface emitting lasers; 1.3 mum; 17 dB; 19 dB; GaInNAs; GaInNAs SOA; gain characterization; multiple quantum-well SOA; semiconductor optical amplifiers; two reflection-format laser; vertical-cavity SOA; Etching; Mirrors; Optical fiber communication; Optical fiber polarization; Optical noise; Optical pumping; Quantum well devices; Reflectivity; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363381
Filename
1363381
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