Novel integration technologies for photonic devices: Low threshold single-mode lasers by using lateral quantum size effect

Author

Arai, Shigehisa ; Ohira, Kazuya ; Murayama, Tomonori

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Japan

Volume

2

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

603

Abstract

The integration technique utilizing the energy blue shift due to the lateral quantum confinement effect is presented. A low threshold current operation with stable single-mode property has been successfully obtained for a distributed-reflector (DR) laser by adopting wide and narrow wirelike active regions for the active and passive sections, respectively.

Keywords

distributed Bragg reflector lasers; integrated optics; integrated optoelectronics; laser modes; laser stability; monolithic integrated circuits; quantum well lasers; semiconductor quantum wires; size effect; spectral line shift; distributed-reflector laser; energy blue shift; integration technologies; lateral quantum size effect; low threshold lasers; monolithic integration; photonic devices; quantum wire structure; single-mode lasers; stable single-mode property; threshold current operation; wirelike active regions; Distributed Bragg reflectors; Dry etching; Laser stability; Laser transitions; Lithography; Photonics; Potential well; Quantum well lasers; Threshold current; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363383

Filename

1363383