DocumentCode :
2020336
Title :
Design of 920 MHz, 0.8 μm CMOS Low Noise Amplifier for UHF RFID Reader
Author :
Marzuki, A. ; David, Stephanie
Author_Institution :
Technol. Sdn Bhd, IT Centre KHTP, Kedah
fYear :
2006
fDate :
12-14 Sept. 2006
Firstpage :
149
Lastpage :
151
Abstract :
A 920 MHz low noise amplifier (LNA) design for UHF RFID reader application, requiring one external inductor and matched to 50 Ω at the output, has been implemented in a standard analog 0.8-μm CMOS technology. Cascode topology is used in the design provide good gain and moderate noise figure. High frequency inductor model is also presented. Simulated noise figures for the LNA are 2.02 dB at 197 mW, and 2.81 dB at 28.2 mW. The LNA has a power gain of 15.7 dB, and an IIP3 of 3 dBm at 197 mW. The LNA has a power gain of 12.46 dB, and an IIP3 of 2.61 dBm at 28.2 mW.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; inductors; low noise amplifiers; radiofrequency identification; 0.8 micron; 12.46 dB; 15.7 dB; 197 mW; 2.02 dB; 2.81 dB; 28.2 mW; 920 MHz; CMOS low noise amplifier; UHF RFID reader; cascode topology; high frequency inductor model; standard analog CMOS technology; Application specific integrated circuits; CMOS technology; Costs; Impedance; Inductors; Low-noise amplifiers; Radiofrequency identification; Supply chain management; Topology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
RF and Microwave Conference, 2006. RFM 2006. International
Conference_Location :
Putra Jaya
Print_ISBN :
0-7803-9744-4
Electronic_ISBN :
0-7803-9745-2
Type :
conf
DOI :
10.1109/RFM.2006.331057
Filename :
4133572
Link To Document :
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