Title :
Dynamic characteristics of quantum dot lasers
Author :
Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD) laser performance. This study also presents the L-I characteristics of a single-mode 1.3 μm p-doped QD laser at various temperatures. Results show that this is the first time that a semiconductor laser has displayed such temperature invariant features.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical modulation; quantum dot lasers; semiconductor doping; thermo-optical effects; 1.3 mum; InGaAs-GaAlAs; L-I characteristics; dynamic laser characteristics; laser performance; modulation doping; p-doped QD laser; quantum dot lasers; semiconductor laser; single-mode laser; small-signal modulation; temperature invariant features; tunnel injection; Bandwidth; Electrons; Epitaxial layers; Laser modes; Laser theory; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Temperature; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363389
