DocumentCode
2020503
Title
35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 μm
Author
Tan, W.K. ; Bryce, A.C. ; Marsh, J.H. ; Maximov, M.V. ; Ustinov, V.M.
Author_Institution
Dept. of Electr. & Electron. Eng., Glasgow Univ., UK
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
617
Abstract
35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 μm is reported for the first time. Pure passive mode locking without any trace of self-pulsation is achieved.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; quantum dot lasers; 1.3 mum; 35 GHz; InAs-GaAs-AlGaAs; InAs/GaAs/AlGaAs lasers; mode locked lasers; passive mode locking; quantum dot lasers; Bandwidth; Diode lasers; Dry etching; Frequency estimation; Gallium arsenide; Laser mode locking; Quantum dot lasers; Quantum well lasers; Radio frequency; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363390
Filename
1363390
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