Power amplifier memory-less pre-distortion for 3GPP LTE application

Author

Bensmida, S. ; Morris, K. ; Lees, J. ; Wright, P. ; Benedikt, J. ; Tasker, P.J. ; Beach, M. ; McGeehan, J.

Author_Institution

CCR, Univ. of Bristol, Bristol, UK

fYear

2009

fDate

Sept. 29 2009-Oct. 1 2009

Firstpage

1433

Lastpage

1436

Abstract

A new and simple power amplifier (PA) linearization method is proposed and demonstrated using a very high efficiency yet inherently nonlinear inverse class-F PA. This was conducted in the presence of a generic variable envelope RF signal in order to extract its AM-AM and AM-PM characteristics. Deducing the polynomial pre-distortion parameters from the AM-AM and AM-PM characteristic has resulted in the successful linearization of the PA in the presence of 3GPP long term evolution (LTE) signals. The results obtained for the PA - a 12 W GaN HEMT inverse class-F structure designed to operate at 900 MHz - demonstrate the proof of concept and the efficiency of the proposed linearization technique with significant advantageous reduction in base-band resources for 3GPP LTE applications.

Keywords

3G mobile communication; III-V semiconductors; distortion; gallium compounds; high electron mobility transistors; polynomials; power amplifiers; 3GPP long term evolution signals; AM-AM characteristics; AM-PM characteristics; GaN; GaN HEMT inverse class-F structure; generic variable envelope RF signal; nonlinear inverse class-F power amplifier; polynomial predistortion parameters; power amplifier linearization method; power amplifier memoryless predistortion; Bandwidth; Gallium nitride; HEMTs; High power amplifiers; Linearization techniques; Microwave amplifiers; Peak to average power ratio; Polynomials; Power amplifiers; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. EuMC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4748-0

Type

conf

Filename

5296261