Fast physic based analysis of multifinger MOSFETs with SB-SP combined method for global modeling

In this work, the frequency-domain spectral balance technique, which has been demonstrated to be a viable alternative to the mixed-domain harmonic balance technique is combined to the space-domain polynomial expansion of the physical quantities inside the semiconductor for the solution of steady-state nonlinear differential equations and applied to the physical analysis of multifinger MOSFET devices in linear and nonlinear regime and coupled to a commercial electromagnetic solver. This method allows a really fast CAD analysis both in DC and RF periodic regime especially when global modeling is required. A quasi-2D hydrodynamic formulation is given for a 0.35 μm gate length with 10 μm periphery three finger MOSFET; results are compared to those of a standard physical time-domain, a harmonic balance and spectral balance for time comparison. Moreover S-parameter comparisons with a commercial CAD tools with a compact model for circuit analysis are also given.