DocumentCode :
2020704
Title :
Analysis on the Effects of MOSFET Threshold Voltage Mismatch in CMOS Operational Amplifiers for RF Applications
Author :
Ab-Rahman, A.A.H. ; Kamisian, I.
Author_Institution :
Dept. of Microelectron. & Comput. Eng., Universiti Teknologi Malaysia, Johor
fYear :
2006
fDate :
12-14 Sept. 2006
Firstpage :
192
Lastpage :
196
Abstract :
CMOS operational amplifiers (op amps) are used in RF circuit blocks as low noise or power amplifiers. One of the critical issues in the performance and operation of these op amps is its threshold voltage (Vth) mismatch between adjacent MOSFET devices. Different Vth values between the op amps´ input MOSFETs of the differential stage causes it to deviate in its output specification, which include among others, the AC and DC gain, bandwidth, and most notably, the offset voltage. First order analysis of offset voltage approximation is performed with 30% Vth variation, and the obtained result is verified through a BSIM3 MOSFET model, with parametric sweep SPICE simulation of a 2-stage large gain and bandwidth op amp. The study is found to be crucial in order to develop a technique that could detect Vth variation of transistors, and compensate op amps output specifications accordingly
Keywords :
CMOS analogue integrated circuits; MOSFET; SPICE; operational amplifiers; radiofrequency integrated circuits; semiconductor device models; AC gain; BSIM3 MOSFET model; CMOS operational amplifiers; DC gain; MOSFET devices; RF circuit blocks; RFIC; SPICE simulation; offset voltage; threshold voltage mismatch; transistors; Bandwidth; Circuit noise; Low-noise amplifiers; MOSFET circuits; Operational amplifiers; Performance analysis; Radio frequency; Radiofrequency amplifiers; SPICE; Threshold voltage; Operational Amplifiers; RFIC; Threshold Voltage Mismatch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
RF and Microwave Conference, 2006. RFM 2006. International
Conference_Location :
Putra Jaya
Print_ISBN :
0-7803-9744-4
Electronic_ISBN :
0-7803-9745-2
Type :
conf
DOI :
10.1109/RFM.2006.331067
Filename :
4133582
Link To Document :
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