Title :
The Impact of Multiple-Gated Layout on the Drain-Source Current of pseudomorphic-HEMTS
Author :
Osman, Mohd Nizam ; Awang, Zaiki ; Yaakob, Syamsuri ; Yahya, Mohamed Razman ; Mat, Abdul Fatah Awang
Author_Institution :
Microelectron. & Nano Tech., TM R& D Sdn. Bhd.
Abstract :
The measurement and analysis to search the impact of multiple-gated structure of a GaAs based p-HEMT device towards the drain-source current (Ids) is presented here. The experimental works had been carried out on the GaAs wafer that consists of 2times60, 4times75 and 6times150 p-HEMT device layouts for the I-V characteristic. The I-V measurement was performed using on-wafer probing technique which applied semi-auto probe station and Keithley parameter analyzer to extract I-V curve. From the I-V data, it was found that the p-HEMT layout that had higher number of gates exhibited a significant impact on the Ids at the same Vgs bias value. The Ids of six-gated layout was improved about 40% as compared to 4-gated layout and about 60% to 2-gated layout. The effect on the I-V performance due to the number of gates in the layout has also been discussed in detail for circuit design applications
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; GaAs; GaAs p-HEMT device; GaAs wafer; I-V characteristic; I-V measurement; Keithley parameter analyzer; drain-source current; multiple-gated layout; multiple-gated structure; on-wafer probing technique; p-HEMT layout; pseudomorphic-HEMT; semiauto probe station; Current measurement; Electric variables; Energy consumption; Gallium arsenide; Intrusion detection; Power measurement; Probes; Radio frequency; Semiconductor devices; Threshold voltage; Ids; Multiple-gated; Vds; Vgs; p-HEMT device;
Conference_Titel :
RF and Microwave Conference, 2006. RFM 2006. International
Conference_Location :
Putra Jaya
Print_ISBN :
0-7803-9744-4
Electronic_ISBN :
0-7803-9745-2
DOI :
10.1109/RFM.2006.331069
