DocumentCode :
2020814
Title :
Fabrication of Microchannel embedded TSV interposer and its influence on TSV´s electrical parameters
Author :
Xia, Yanming ; Ma, Shenglin ; Qin, Lifeng ; Jin, Yufeng ; Chen, Jing
Author_Institution :
Department of Mechanical & Electrical Engineering, Xiamen University, Fujian, 361005, China
fYear :
2015
fDate :
11-14 Aug. 2015
Firstpage :
699
Lastpage :
704
Abstract :
In this paper Microchannel embedded TSV interposer is presented, process development is proposed with direct Si-Si wafer bonding, effects of embedded cooling Microchannel on TSV´s parasitic electrical parameters are analyzed with finite element analysis tool. With the developed process, Microchannel sample and Cu TSV sample are successfully fabricated. Simulation results disclose that microchannel with cooling DI water will make influence mainly on TSV´s parasitic capacitance and conductance.
Keywords :
Bonding; Cooling; Inductance; Microchannels; Silicon; Through-silicon vias; Microchannels; Staggering Si Posts; TSV interposer; TSV´s electrical parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location :
Changsha, China
Type :
conf
DOI :
10.1109/ICEPT.2015.7236681
Filename :
7236681
Link To Document :
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