Title :
Ultrafast all-optical modulation by GaN intersubband transition in a ridge waveguide
Author :
Iizuka, Norio ; Kaneko, Kei ; Suzuki, Nobyo
Author_Institution :
Corp. Res.&Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, all-optical modulation of four signal pulses with the interval of 1 ps or 0.67 ps is presented by utilizing GaN-ISBT in a ridge waveguide. The optical pulses are generated by an optical parametric oscillator (OPO) excited by a mode-locked Ti:sapphire laser. The results confirms the possibility all-optical devices operating at a bit rate of 1 Tb/s or higher.
Keywords :
III-V semiconductors; gallium compounds; laser mode locking; optical communication equipment; optical modulation; optical parametric oscillators; optical pulse generation; optical waveguides; ridge waveguides; semiconductor quantum wells; 0.67 ps; 1 ps; Al2O3:Ti; GaN; GaN intersubband transition; OPO; mode-locked Ti:sapphire laser; optical parametric oscillator; optical pulse generation; ridge waveguide; ultrafast all-optical modulation; Gallium nitride; Nonlinear optics; Optical modulation; Optical pulse generation; Optical pulses; Optical waveguides; Oscillators; Pulse modulation; Ultrafast optics; Waveguide transitions;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363414
