Ultrafast all-optical modulation by GaN intersubband transition in a ridge waveguide

Author

Iizuka, Norio ; Kaneko, Kei ; Suzuki, Nobyo

Author_Institution

Corp. Res.&Dev. Center, Toshiba Corp., Kawasaki, Japan

Volume

2

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

665

Abstract

In this paper, all-optical modulation of four signal pulses with the interval of 1 ps or 0.67 ps is presented by utilizing GaN-ISBT in a ridge waveguide. The optical pulses are generated by an optical parametric oscillator (OPO) excited by a mode-locked Ti:sapphire laser. The results confirms the possibility all-optical devices operating at a bit rate of 1 Tb/s or higher.

Keywords

III-V semiconductors; gallium compounds; laser mode locking; optical communication equipment; optical modulation; optical parametric oscillators; optical pulse generation; optical waveguides; ridge waveguides; semiconductor quantum wells; 0.67 ps; 1 ps; Al₂O₃:Ti; GaN; GaN intersubband transition; OPO; mode-locked Ti:sapphire laser; optical parametric oscillator; optical pulse generation; ridge waveguide; ultrafast all-optical modulation; Gallium nitride; Nonlinear optics; Optical modulation; Optical pulse generation; Optical pulses; Optical waveguides; Oscillators; Pulse modulation; Ultrafast optics; Waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363414

Filename

1363414