Title :
Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels
Author :
Gan, Kian-Giap ; Bowers, John E. ; Sun, Chi-Kuang
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The carrier dynamics of an InGaN multiple-quantum-well (MQW) laser diode under the high current injection level is examined using time-resolved pump-probe measurements. Subpicosecond intersubband hole relaxation and hole heating processes are found to dominate carrier dynamics responses, different from GaAs and InP based laser diodes.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; optical pumping; quantum well lasers; time resolved spectra; InGaN; current injection level; femtosecond carrier dynamics; hole heating processes; multiple-quantum-well laser diodes; subpicosecond intersubband hole relaxation; time-resolved pump-probe measurements; Delay; Diode lasers; Laser beams; Laser excitation; Optical reflection; Probes; Quantum well devices; RNA; Tellurium; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363416
