Title :
40 GHz monolithic integrated 1.3 μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure
Author :
Knödl, T. ; Hanke, C. ; Saravanan, B.K. ; Peschke, M. ; Macaluso, R. ; Stegmuller, B.
Author_Institution :
Corp. Res. Photonics, Infineon Technol. AG, Munich, Germany
Abstract :
Monolithic integrated DFB laser-modulator devices (EML) based on the double-type MQW stack are studied. First experimental results on optimization strategies for high-speed double stack EMLs are presented. The small-signal 3 dB bandwidth is improved, with respect to that previous device design, by more than a factor of two, up to the 40 GHz regime. This is done by decreasing the additional pin-junction capacitance in the EAM section by mesa width shrinkage and replacing the n-type InP substrate by a si-type one. Thus, the novel double-stack EML approach, fabricated in the InGaAlAs-InP material system, has the potential to meet the requirements of future 40 Gbps optoelectronic transceivers.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; distributed feedback lasers; electro-optical modulation; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; laser transitions; monolithic integrated circuits; optical design techniques; optical fabrication; optimisation; quantum well lasers; 1.3 mum; 10 to 15 GHz; 3 dB; 30 to 40 GHz; EML; InGaAlAs-InP; double-stack MQW layer structure; mesa width shrinkage; monolithic integrated DFB laser-modulator devices; n-type InP substrate; optoelectronic transceivers; pin-junction capacitance; Absorption; Bandwidth; Chirp modulation; Epitaxial growth; Etching; Optical materials; Optical waveguides; Quantum well devices; Substrates; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363419
