DocumentCode :
2021368
Title :
Optimum bias for highly linear and efficient doherty power amplifier with memoryless digital predistortion
Author :
Lee, Mun-Woo ; Lee, Yong-Sub ; Kam, Sang-Ho ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electr. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
fYear :
2009
fDate :
Sept. 29 2009-Oct. 1 2009
Firstpage :
1441
Lastpage :
1444
Abstract :
This paper investigates the optimum bias to achieve a highly efficient and linear Doherty power amplifier (DPA) with memoryless digital predistortion (DPD). The DPA is implemented using 25-W GaN HEMTs The PAE of 54.5% is achieved at an output power of 40 dBm for a 2.14-GHz continuous wave. The bias optimization and memoryless DPD are employed to improve the linearity of the DPA. The 11th-memoryless polynomial and recursive least square algorithm are used to implement the memoryless DPD. For a one-carrier WCDMA signal at an output power of 36 dBm, the adjacent channel leakage ratio at ±5-MHz offset are below -48 dBc with the drain efficiency of 40% after the linearization with the optimum bias.
Keywords :
UHF amplifiers; gallium compounds; high electron mobility transistors; least mean squares methods; polynomials; power amplifiers; wide band gap semiconductors; 11th-memoryless polynomial; GaN; HEMT; adjacent channel leakage ratio; drain efficiency; efficiency 40 percent; efficiency 54.5 percent; efficient Doherty power amplifier; frequency 2.14 GHz; high linear Doherty power amplifier; memoryless digital predistortion; one-carrier WCDMA signal; power 25 W; recursive least square algorithm; Gallium nitride; HEMTs; High power amplifiers; Least squares methods; Linearity; MODFETs; Polynomials; Power amplifiers; Power generation; Predistortion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
Type :
conf
Filename :
5296296
Link To Document :
بازگشت