Title :
Low-divergence large-optical-cavity InGaAs quantum-dot laser with distributed active layers
Author :
Kim, S. ; Bryce, A.C. ; Yanson, D.A. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
A large optical cavity, quantum-dot ridge waveguide laser with distributed active layers has been fabricated and characterized. Lasing in a single spatial mode has been achieved with narrow far-field angles (12°×23°) and a low threshold current.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical fabrication; quantum dot lasers; waveguide lasers; GaAs-InGaAs; distributed active layers; large-optical-cavity InGaAs quantum-dot laser; quantum-dot ridge waveguide laser; spatial mode; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical refraction; Optical sensors; Optical variables control; Optical waveguides; Quantum dot lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363427
