DocumentCode
2021451
Title
Optimization of gain in multilayer GaInP quantum dots
Author
Smowton, P.M. ; Lutti, J. ; Lewis, G.M. ; Blood, P. ; Ramsey, A.J. ; Mowbray, D.J. ; Krysa, A.B. ; Lin, J.C. ; Roberts, J.S.
Author_Institution
Dept. of Phys. & Astron., Cardiff Univ., UK
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
695
Abstract
We optimize the gain of InP/GalnP dots by varying the growth rate, matrix material and substrate orientation. A 750 μm long laser with uncoated facets emitting at 688 nm has a threshold current density of 2.4 kAcm-2.
Keywords
III-V semiconductors; MOCVD; current density; gallium compounds; indium compounds; optimisation; photoluminescence; quantum dot lasers; semiconductor growth; superradiance; 688 nm; 750 mum; InP-GaInP; gain optimization; growth rate; matrix material; multilayer GaInP quantum dots; substrate orientation; threshold current density; Atomic force microscopy; Indium phosphide; Nonhomogeneous media; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Spontaneous emission; Temperature dependence; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363429
Filename
1363429
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