Title :
The 3 dB bandwidth of strain-compensated dilute-nitride quantum-well lasers
Author :
Anton, O. ; Menoni, C.S. ; Yeh, Jeng-Ya ; Van Roy, Tod T. ; Mawst, L.J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Above threshold frequency response measurements carried out on strain-compensated InGaAs and InGaAsN lasers with similar separate confinement heterostructures show a severe reduction in the laser relaxation frequency and damping due to the incorporation of nitrogen.
Keywords :
III-V semiconductors; compensation; gallium arsenide; indium compounds; optical communication equipment; quantum well lasers; 3 dB; InGaAs; InGaAsN; laser relaxation frequency; nitrogen; strain-compensated dilute-nitride quantum-well lasers; threshold frequency response measurements; Bandwidth; Damping; Diode lasers; Equations; Frequency response; Indium gallium arsenide; Laser modes; Pulsed laser deposition; Quantum well lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363430
