Title :
Real-time FPGA-based baseband predistortion of W-CDMA 3GPP high-efficiency power amplifiers: Comparing GaN HEMT and Si LDMOS predistorted PA performances
Author :
Quaglia, R. ; Camarchia, V. ; Guerrieri, S. Donati ; Lima, E.G. ; Ghione, G. ; Luo, Qiang ; Pirola, M. ; Tinivella, R.
Author_Institution :
DELEN, Politec. di Torino, Torino, Italy
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
We carry out a comparative design study on two high-efficiency power amplifiers (a second-harmonic tuning LD-MOS and a Doherty GaN-based amplifier) linearized through baseband digital predistortion so as to comply with the W-CDMA 3GPP standard with acceptable efficiency. Several predistortion schemes (both memoryless and with memory) were tried, having in mind the final FPGA implementation. The results, besides highlighting some interesting features of the two amplifiers considered, show that significant improvements can be achieved in the Power Added Efficiency (PAE) even starting from a highly efficient but poorly linear power stage.
Keywords :
3G mobile communication; HEMT integrated circuits; III-V semiconductors; code division multiple access; distortion; field programmable gate arrays; gallium compounds; power amplifiers; silicon; wide band gap semiconductors; GaN; HEMT; LDMOS; Si; W-CDMA 3GPP standard; baseband digital predistortion; field programmable gate arrays; high-efficiency power amplifiers; power added efficiency; wideband code division multiple access; Baseband; Field programmable gate arrays; Frequency; Gallium nitride; HEMTs; High power amplifiers; Microwave amplifiers; Multiaccess communication; Predistortion; Wireless communication;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0