Title :
Concurrent dual band 2.4/3.5GHz fully integrated power amplifier in 0.13µm CMOS technology
Author :
Ghajar, Mohammad Reza ; Boumaiza, Slim
Author_Institution :
Emerging Radio Syst. Group, Univ. of Waterloo, Waterloo, ON, Canada
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
This paper proposes novel dual-band matching network, suitable for the design of integrated concurrent dual band power amplifier in a multi-standard radiofrequency front-end. The effectiveness of the proposed dual band matching network was demonstrated through the implementation of a power amplifier operating at 2.4 GHz and 3.5 GHz in IBM 0.13 μm CMOS technology. The designed 1.25 mm × 1.25 mm dual band PA allowed for power added efficiency (PAE) and output power of about 42% and more than 18 dbm, respectively, at both frequencies.
Keywords :
CMOS integrated circuits; UHF power amplifiers; microwave power amplifiers; CMOS technology; concurrent dual band fully integrated power amplifier; dual-band matching network; frequency 2.4 GHz to 3.5 GHz; multistandard radiofrequency front-end; power added efficiency; size 0.13 mum; Bandwidth; CMOS technology; Circuits; Dual band; Microwave amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Signal processing; Switches; Dual band front ends; Integrated; Power Amplifier;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
