Title :
Effect of electroplating parameter on the TSV-Cu protrusion during annealing and thermal cycling
Author :
Chen, Si ; Qin, Fei ; Wang, Ruiming ; An, Tong ; Yu, Huiping
Author_Institution :
College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, 100124, China
Abstract :
The effect of electroplating parameters (filling current density and additive concentration) on the copper in Through-Silicon-Via, abbreviated to TSV-Cu, protrusion during annealing is analyzed. Also, the influence of electro deposition parameters, and the annealing process on the TSV-Cu protrusion during thermal cycling are studied. The result shows that, the distribution of the TSV-Cu protrusion values after annealing conforms to the normal distribution law, and the protrusions of TSVs filled by higher current density and higher additive concentration are lower. In addition, annealing decrease the extent of protrusion during subsequent ten cycles of thermal cycling, and the protrusion values are decreased by 0.52µm∼0.72µm. The results help to solve key TSV-related manufacturing yield and reliability challenge for 3D IC integration.
Keywords :
Additives; Annealing; Filling; Reliability; Silicon; Through-silicon vias; Cu protrusion; Through Silicon Vias (TSV); annealing; electroplating filling; thermal cycling;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location :
Changsha, China
DOI :
10.1109/ICEPT.2015.7236719
