Title :
Optimized pad design for millimeter-wave applications with a 65nm CMOS RF technology
Author :
Aloui, Sofiane ; Kerhervé, Eric ; Bégueret, Jean Baptiste ; Plana, Robert ; Bélot, Didier
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
Millimeter-wave pads based on a 65 nm CMOS technology from STMicroelectronics have been designed and measured. A pad was optimized to minimize losses caused by a ground shield and by the conductive substrate. Modelling techniques and special cares to design a millimeter pad with a minimum of effects are highlighted. The goal is to integrate this pad in active devices such as a power amplifier (PA) or a low noise amplifier (LNA). The frequency response shows that the intrinsic capacitance of an optimum pad does not exceed 17fF at 60 GHz. The aimed application is the unlicensed band around 60 GHz suitable for Wireless Personal Area Network application (WPAN).
Keywords :
CMOS integrated circuits; MIMIC; integrated circuit interconnections; personal area networks; shielding; wireless LAN; CMOS RF technology; WPAN; conductive substrate; frequency 60 GHz; ground shield; intrinsic capacitance; millimeter wave applications; optimized pad design; optimum pad; size 65 nm; unlicensed band; wireless personal area network; Active noise reduction; CMOS technology; Design optimization; Frequency response; Low-noise amplifiers; Millimeter wave devices; Millimeter wave measurements; Millimeter wave technology; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
