Title :
S-band discrete and MMIC GaN power amplifiers
Author :
Nilsson, Joakim ; Billström, Niklas ; Rorsman, Niklas ; Romanini, Paolo
Author_Institution :
Saab Microwave Syst., Saab AB, Gothenburg, Sweden
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the European co-project Korrigan. The MMIC power amplifier was designed using a 0.25 μm GaN HEMT process supplied and processed by Chalmers.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; power HEMT; wide band gap semiconductors; GaN; HEMT; MMIC power amplifier; discrete power amplifier; frequency 2.7 GHz to 3.3 GHz; high power amplifier; power 10 W; power 100 W; size 19.2 mm; Bars; Electromagnetic heating; Fixtures; Gallium nitride; High power amplifiers; MMICs; Microwave theory and techniques; Packaging; Phased arrays; Power amplifiers;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
