Abstract :
The following topics were dealt with: gallium arsenide semiconductors; compound semiconductors; field effect transistors; pseudomorphic high electron-mobility transistor; heterojunction bipolar transistors; PHEMT and HBT power amplifiers; microwave integrated mixers; low noise and broadband amplifiers; nanodevices for RF applications; photonic devices and circuits; 3D MCM modules for space applications; microwave and millimeter-wave circuits and sources; device reliability; monolithic millimeter-wave integrated circuits; cellular and WLAN (wireless local area network) applications; microwave device and circuit packaging; millimeter-wave frequency converters; and RF-MEMS technology
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; integrated circuit packaging; integrated circuit reliability; integrated optics; micromechanical devices; microwave integrated circuits; microwave power amplifiers; millimetre wave frequency convertors; millimetre wave integrated circuits; millimetre wave power amplifiers; multichip modules; power HEMT; power bipolar transistors; semiconductor device reliability; wireless LAN; 3D MCM modules; GaAs; HBT power amplifiers; PHEMT power amplifiers; RF applications; RF-MEMS technology; WLAN applications; broadband amplifiers; cellular applications; circuit packaging; compound semiconductors; device reliability; field effect transistors; gallium arsenide semiconductors; heterojunction bipolar transistors; low noise amplifiers; microwave circuits; microwave integrated mixers; millimeter-wave frequency converters; monolithic millimeter-wave integrated circuits; nanodevices; photonic circuits; photonic devices; pseudomorphic high electron-mobility transistor; space applications; wireless local area network;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
