GAAS® 2004 Best Paper Award

Summary form only given, as follows. The three best paper Awards of 1500 Euros each were assigned in the closing session on 12 October 2004. Presentation s were made to: D.A.J. Moran, E. Boyd, K. Elgaid, H. McLelland, C.R. Stanley, I.G. Thayne of the University of Glasgow, UK for the paper entitled: "50nm T-gate Lattice Matched InP HEMT\´s with fT of 430 GHz using a non??annealed ohmic contact process" (sponsored by ELISRA). Also to: D.K. Krause, R.Q. Quay, R.K. Kiefer, A.T. Tessman, H.M. Massler, A.L. Leuther, T.M. Merkle, S.M. Mueller, M.M. Mikulla, M.S. Schlechtweg and G.W. Weiman of the Fraunhofer Institute, Germany For the paper entitled: "Robust GaN HEMT Low Noise Amplifier MMIC\´s for X Band Applications" (sponsored by UMS) A.B. Bessemoulin, J.G. Grunenputt, E.K. Kohn, P.F. Fellon of the UMS, Fraunhofer Institut and University of Ulm, Germany for the paper entitled: "Coplanar W-band Low Noise Amplifier MMIC using 100 nm Gate length GaAs PHEMT\´s" (sponsored by Alenia Spazio).