Title :
Effect of the various doping concentration of BF2+ on polysilicon-gate PMOS
Author :
Aziz A, Abdul ; Zamani, N.S.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
This paper presents the effect of various doping concentration of BF2 +polysilicon from 1011 to 1020 (atoms/cm3) for PMOS device using SILVACO TCAD (Technology Computer Aided Design) software. The threshold voltage of polysilicon obtain from ID-VGS curve was analyzed. The results show that BF2 + at dose 1014 to 1019 (atoms/cm3) giving the better characteristics of the PMOS at the threshold voltage between 1.0V to 1.3V. The resistivity of the polysilicon is gradually decreased as a concentration of doping increase, while the conductivity is reciprocal of the resistivity. The resistivity of polysilicon varies considerably depending upon the requirement in PMOS applications. To determine the better doping, the leakage current can be extracted from the I-V curve.
Keywords :
MOSFET; boron compounds; leakage currents; semiconductor device models; semiconductor doping; silicon; technology CAD (electronics); BF2+polysilicon; I-V curve; ID-VGS; SILVACO TCAD; Technology Computer Aided Design software; doping concentration; leakage current; polysilicon-gate PMOS; threshold voltage; Application software; Conductivity; Doping; Impurities; Integrated circuit technology; Leakage current; MOS devices; MOSFETs; Substrates; Threshold voltage; Conductivity; Doping concentration; Polysilicon; Resistivity; Threshold voltage;
Conference_Titel :
Research and Development (SCOReD), 2009 IEEE Student Conference on
Conference_Location :
UPM Serdang
Print_ISBN :
978-1-4244-5186-9
Electronic_ISBN :
978-1-4244-5187-6
DOI :
10.1109/SCORED.2009.5443098
