DocumentCode
2022443
Title
Status of AlGaN/GaN HEMT technology - a UCSB perspective
Author
Mishra, Umesh K.
Author_Institution
Dept. of Electr. & Comput. Eng., UCSB, Santa Barbara, CA, USA
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
21
Lastpage
27
Abstract
The following major technological advances (i) the ability to grow high quality materials on sapphire and SiC, (ii) the advent of SiN passivation to eliminate current slump or dispersion, (iii) advanced processing, and (iv) implementation of field plates have taken AlGaN/GaN HEMTs to commercialization in the relatively short time of approximately a decade. In this paper, we present the highlights of this research.
Keywords
aluminium compounds; gallium compounds; high electron mobility transistors; nitrogen compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; current slump elimination; field plates; high electron mobility transistors; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; Passivation; Silicon carbide; Silicon compounds; Surface charging; Surface discharges; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637142
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