Title :
Status of AlGaN/GaN HEMT technology - a UCSB perspective
Author :
Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., UCSB, Santa Barbara, CA, USA
Abstract :
The following major technological advances (i) the ability to grow high quality materials on sapphire and SiC, (ii) the advent of SiN passivation to eliminate current slump or dispersion, (iii) advanced processing, and (iv) implementation of field plates have taken AlGaN/GaN HEMTs to commercialization in the relatively short time of approximately a decade. In this paper, we present the highlights of this research.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; nitrogen compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; current slump elimination; field plates; high electron mobility transistors; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; Passivation; Silicon carbide; Silicon compounds; Surface charging; Surface discharges; Voltage;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
