Title :
A cost-effective 10 Watt X-band high power amplifier and 1 Watt driver amplifier chip-set
Author :
de Hek, A.P. ; van der Bent, G. ; van Wanum, M. ; van Vliet, F.E.
Author_Institution :
TNO Defence, Security & Safety, Netherlands
Abstract :
An X-band power amplifier chip-set for communication and radar applications has been developed and tested. The chip set consists of a two- and three-stage high-power amplifier, which has an output power of 10 Watt over the 8.5 - 10.5 GHz frequency band and a driver amplifier with an output power of more than 1 Watt over the 8.5 - 11.5 GHz frequency band. The amplifiers have been developed in the 6-inch 0.5 /spl mu/m power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process in combination with the used innovative design approach results in a cost effective chip set, which is competitive in both performance and price with any available solution.
Keywords :
microwave power amplifiers; power HEMT; 1 W; 10 W; 8.5 to 11.5 GHz; X-band high power amplifier; driver amplifier chip-set; power pHEMT process; Costs; Driver circuits; Frequency; High power amplifiers; PHEMTs; Power amplifiers; Power generation; Radar applications; Semiconductor optical amplifiers; Testing;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
