A high-efficiency HBT-based class-E power amplifier for 2 GHz

Author

Milosevic, Dusan ; van der Tang, Johan ; vann Roermund, A.

Author_Institution

Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Netherlands

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

45

Lastpage

48

Abstract

A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The single-ended single-stage PA delivers 24 dBm of output power at 2 GHz, achieves a peak power added efficiency (PAE) of 68% and exhibits an excellent transducer power gain higher than 16 dB. The PAE remains high over a wide output power range. The circuit contains the standard 50-ohm input and output match and is capable of high-efficiency power amplification of constant-envelope signals, which has been demonstrated with the GMSK signal. Both lumped- and distributed-components concepts for the practical implementation of the load network are presented and discussed.

Keywords

UHF power amplifiers; heterojunction bipolar transistors; minimum shift keying; 2 GHz; 50 ohm; GMSK signal; constant-envelope signals; distributed-components concepts; heterojunction bipolar transistor; high-efficiency HBT-based class-E power amplifier; load network; lumped-components; peak power added efficiency; Circuits; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637146