Title :
Nonlinear optical materials for high power tunable mid-IR lasers
Author :
Schunemann, Peter G.
Author_Institution :
BAE Syst., Nashua, NH, USA
Abstract :
In this paper we will describe recent advances in nonlinear optical materials for mid-IR frequency generation. Improved processing continues to reduce absorption losses in the bulk birefringent crystals ZnGeP2, CdGeAs2, and AgGaSe2, and all-epitaxial processing of QPM GaAs is producing multi-grating wafers up to 3-inch diameter and 1-mm thick.
Keywords :
III-V semiconductors; birefringence; cadmium compounds; gallium arsenide; germanium compounds; infrared spectra; laser tuning; optical frequency conversion; optical losses; optical materials; semiconductor lasers; silver compounds; ternary semiconductors; zinc compounds; 1 mm; 3 inch; AgGaSe2; CdGeAs2; GaAs; ZnGeP2; absorption losses; all-epitaxial processing; bulk birefringent crystals; midIR frequency generation; multigrating wafers; nonlinear optical materials; tunable midIR lasers; Absorption; Birefringence; Crystalline materials; Crystals; Frequency; Optical materials; Power generation; Power lasers; Thermal conductivity; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363484
