Title :
Microwave and Millimeter-Wave Transistor Devices
Author :
Takayama, Yoichiro
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation Miyazaki, Miyamae-ku, Kawasaki 213, JAPAN
Abstract :
This paper will review the recent advances in microwave and millimeter-wave, especially above X-band, transistors and monolithic integrated circuits in Japan. GaAs and related-compound semiconductor devices including GaAs MESFETs, GaAs MMICs, two-dimensional electron gas transistors and heterojunction bipolar transistors will be focussed.
Keywords :
Gallium arsenide; Heterojunction bipolar transistors; MESFETs; MMICs; Microwave devices; Microwave transistors; Millimeter wave integrated circuits; Millimeter wave transistors; Monolithic integrated circuits; Semiconductor devices;
Conference_Titel :
Microwave Conference, 1986. 16th European
Conference_Location :
Dublin, Ireland
DOI :
10.1109/EUMA.1986.334178
