A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers

Author

Wolf, G. ; Demichel, S. ; Leblanc, R. ; Blache, F. ; Lefèvre, R. ; Dambrine, G. ; Happy, H.

Author_Institution

Departement Hyperfrequences et Semicond., Inst. d´´Electronique de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq, France

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

93

Lastpage

95

Abstract

An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.

Keywords

HEMT integrated circuits; III-V semiconductors; distributed amplifiers; gallium arsenide; microwave amplifiers; millimetre wave amplifiers; optical receivers; photodiodes; 0.4 W; 12.5 dB; 40 Gbyte/s; 50 GHz; 9 to 40 GHz; GaAs; circuit consumption; eye diagrams measurements; fiber pig-tailed module; group delay variation; high responsivity photodiode; metamorphic HEMT distributed amplifier; minimum noise figure; optical receivers; photoreceiver operation; Bandwidth; Distributed amplifiers; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; Optical amplifiers; Optical noise; Optical receivers; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637158