DocumentCode :
2022831
Title :
Ultra linear C-band MMIC power amplifiers with 50dbm OIP3
Author :
Leckey, J. ; Alexander, A.
Author_Institution :
Mimix Broadband (Eur.), Belfast, UK
fYear :
2009
fDate :
Sept. 29 2009-Oct. 1 2009
Firstpage :
1094
Lastpage :
1096
Abstract :
Two 4 W PA MMICs have been developed which cover bandwidths of 5.5-7.1 GHz and 7.1-8.5 GHz and which demonstrate OIP3 figures of 50 dBm at up to 1 W total two tone output power from a bias of 8 V, 1300 mA. The MMICs were fabricated using a highly linear 0.5 μm GaAs HFET process and packaged in a plastic molded 6 mm QFN package. Interpolation of a comprehensive matrix of two tone load pull data was used to set the design target output and driver stage load impedances over bandwidth for the two stage design. The resulting ratio of OIP3 to P1dB is typically 16 dB. A thermal design approach guided by finite element analysis and IR spectroscopy measurement was used. To the authors knowledge this is a significant improvement in OIP3 linearity over any other reported multi-stage MMIC amplifier operating at C band.
Keywords :
III-V semiconductors; MMIC amplifiers; electronics packaging; finite element analysis; gallium arsenide; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaAs; HFET process; IR spectroscopy measurement; OIP3; bandwidth 5.5 GHz to 7.1 GHz; bandwidth 7.1 GHz to 8.5 GHz; current 1300 mA; driver set stage load impedance; finite element analysis; interpolation; plastic molded QFN package; power 4 W; size 0.5 mum; thermal design approach; ultra linear C-band MMIC power amplifier; voltage 8 V; Bandwidth; Gallium arsenide; HEMTs; Impedance; Interpolation; MMICs; MODFETs; Plastic packaging; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
Type :
conf
Filename :
5296354
Link To Document :
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