Title :
High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs
Author :
Dambrine, G. ; Gloria, D. ; Scheer, P. ; Raynaud, C. ; Danneville, F. ; Lepilliet, S. ; Siligaris, A. ; Pailloncy, G. ; Martineau, B. ; Bouhana, E. ; Valentin, R.
Author_Institution :
DHS, IEMN-CNRS, Villeneuve d´´Ascq, France
Abstract :
65 nm n-MOSFETs show state-of-the-art cut-off frequency with ft = 210 GHz and microwave low noise and high gain properties (NFmin = 0.8 dB and Gass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the downscaling trends.
Keywords :
MOSFET; microwave field effect transistors; 0.8 dB; 12 GHz; 17.3 dB; 210 GHz; MOSFET; high gain properties; microwave low noise; state-of-the-art cut-off frequency; CMOS technology; Calibration; Cutoff frequency; MOSFET circuits; Microelectronics; Microwave technology; Millimeter wave technology; Transconductance;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
