Title :
Frequency response enhancement of a single strained layer SiGe phototransistor based on physical simulations
Author :
Moutier, F. ; Polleux, J.L. ; Rumelhard, C. ; Schumacher, H.
Author_Institution :
ESYCOM, Noisy-le-Grand, France
Abstract :
An original approach based on a physical model is used to evaluate opto-microwave performances of a vertically illuminated single strained layer SiGe HPT. Analysis of opto-microwave performance is presented at 940 nm. The contribution of each region on the dynamic performances is studied. Frequency response enhancement is shown for base optical detection first and also by wavelength analysis while maintaining whole component detection. Increases up to a 9.8 factor for the -3 dB-bandwidth (f/sub -3 dB/) in photodiode mode and of a 2.2 factor for the transition optical frequency (f/sub Topt/) in photo transistor mode are presented, reaching respectively 19.7 GHz and 15.3 GHz.
Keywords :
Ge-Si alloys; frequency response; microwave photonics; photodiodes; phototransistors; semiconductor materials; 15.3 GHz; 19.7 GHz; 940 nm; HPT; SiGe; base optical detection; frequency response enhancement; opto-microwave; photo transistor mode; photodiode mode; single strained layer phototransistor; transition optical frequency; wavelength analysis; Absorption; Circuit noise; Circuit simulation; Frequency response; Germanium silicon alloys; Photonic band gap; Phototransistors; Semiconductor process modeling; Silicon germanium; Stimulated emission;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
