• DocumentCode
    2022935
  • Title

    Spreading behaviors of silicone droplet impact on flat solid surface: Experiments and VOF simulations

  • Author

    Yu, Xingjian ; Shang, Bofeng ; Xie, Bin ; Huang, Mengyu ; Luo, Xiaobing

  • Author_Institution
    School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, China
  • fYear
    2015
  • fDate
    11-14 Aug. 2015
  • Firstpage
    1058
  • Lastpage
    1061
  • Abstract
    Silicone, as the carrier of phosphor powder in the phosphor coating process of white light emitting diode (LED) packaging, its spreading behaviors will influence the morphology of phosphor layer and thus affect the optical and thermal performances of light emitting diodes (LEDs). In this paper, the spreading behaviors of a silicone droplet impact on a flat silicon surface was experimentally and computationally studied. Droplets with the same volume (R=1.1±1%mm) were deposited on a flat silicon substrate at a range of weber number from 5 to 20, morphology change of silicone droplets was captured using a high-speed digital camera. A computational fluid dynamics (CFD) model, based on the volume of fluid (VOF) approach, was used to simulate spreading behaviors of a silicone droplet using the same boundary condition getting from experiments. Time evolution of dynamic radius R(t) and dynamic contact angel θ(t) were analyzed. The CFD simulation results were compared with the experiment results, and the simulation results showed good agreement with the experimental data which indicated that a VOF-based computational model was able to capture key features of the interaction of a silicone droplet with flat solid surfaces.
  • Keywords
    Computational fluid dynamics; Computational modeling; Light emitting diodes; Liquids; Phosphors; Surface morphology; VOF; experiment; light emitting diode; phosphor coating; spreading behaviors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
  • Conference_Location
    Changsha, China
  • Type

    conf

  • DOI
    10.1109/ICEPT.2015.7236762
  • Filename
    7236762