DocumentCode :
2023
Title :
High-efficiency parallel quasi-resonant current source inverter featuring SiC metal-oxide semiconductor field-effect transistors for induction heating systems with coupled inductors
Author :
Sarnago, Hector ; Lucia, O. ; Mediano, Arturo ; Burdio, Jose M.
Author_Institution :
Dept. of Electron. Eng. & Commun., Univ. of Zaragoza, Zaragoza, Spain
Volume :
6
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
183
Lastpage :
191
Abstract :
Efficiency and reliability are the two key design parameters when designing induction heating (IH) systems. A parallel quasi-resonant current source inverter (CSI) is proposed to optimise the converter efficiency and to take advantage of the inherent protection of CSIs. The proposed converter uses a coupled inductor, already present in the system to produce the IH phenomena, in order to reduce the current through the power devices and to ensure zero voltage switching during turn on and turn off transitions. As a consequence, the proposed converter significantly improves the IH system efficiency. An analytical model is proposed to study both operating conditions and efficiency. In addition to this, a 2.2-kW prototype has been designed and implemented to verify the proposed model and to prove the converter feasibility. To utilise the converter at most, SiC metal-oxide semiconductor field-effect transistors have been used, obtaining up to 98.6% efficiency at resonant conditions.
Keywords :
MOSFET; induction heating; inductors; invertors; resonant power convertors; silicon compounds; wide band gap semiconductors; zero voltage switching; SiC; converter efficiency; coupled inductors; induction heating systems; metal oxide semiconductor field effect transistors; parallel quasiresonant current source inverter; power 2.2 kW; zero voltage switching;
fLanguage :
English
Journal_Title :
Power Electronics, IET
Publisher :
iet
ISSN :
1755-4535
Type :
jour
DOI :
10.1049/iet-pel.2012.0537
Filename :
6544359
Link To Document :
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