Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications

This paper presents the first reported quarter-micron double delta doped AlGaAs/ InGaAs charge coupled device for microwave filter applications. The design and fabrication of conventional and multi tapped delay line MMICs for RF filter applications are also discussed. Schrodinger and Poisson´s equations are self consistently solved with current continuity equations to show the variation in channel charge concentration as the gate voltages are varied. The device is implemented as a recessed capacitive gate structure which is fabricated using established GaAs heterostructure MMIC technology to ensure good repeatability.