Title :
High efficiency 10 Gb/s optical modulator driver amplifier using a power pHEMT technology
Author :
Shohat, J. ; Robertson, I.D. ; Nightingale, S.J.
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
Abstract :
This paper presents the design and performance of a high efficiency GaAs MMIC distributed amplifier for 10 Gb/s optical driver applications. The power consumption is only 550 mW, approximately 40% lower than typical reported results for this application. It is shown that while the commonly-used cascode topology gives higher gain-BW performance, the ordinary common-source design gives better efficiency and stability performance. This makes it a better choice for 10 Gb/s applications when a suitable high power pHEMT process is used.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium arsenide; network topology; optical modulation; 10 Gbit/s; 550 mW; GaAs; MMIC distributed amplifier; commonly-used cascode topology; optical modulator driver amplifier; power pHEMT technology; Driver circuits; Gallium arsenide; High power amplifiers; MMICs; Optical amplifiers; Optical design; Optical modulation; PHEMTs; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7