Title :
InP DHBT-based IC technology for high-speed data communications
Author :
Driad, R. ; Schneider, K. ; Makon, R.E. ; Lang, M. ; Nowotny, U. ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Mikulla, M. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. of Appl. Solid State Phys., Freiburg, Germany
Abstract :
In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology. High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 /spl mu/m/sup 2/ exhibited peak f/sub T/ and f/sub MAX/ values of 265 and 305 GHz, respectively, at a collector current density of 3.75 mA//spl mu/m/sup 2/. Using this technology, a set of basic analog and digital IC building blocks, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 Gb/s and beyond, have been successfully designed and fabricated.
Keywords :
III-V semiconductors; amplifiers; data communication; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave integrated circuits; molecular beam epitaxial growth; multiplexing equipment; submillimetre wave integrated circuits; voltage-controlled oscillators; 265 to 305 GHz; 40 Gbit/s; DHBT-based IC technology; InGaAs-InP; collector current density; demultiplexers; double heterojunction bipolar transistor; high-speed data communications; integrated circuits; lumped amplifiers; multiplexers; voltage controlled oscillators; Current density; DH-HEMTs; Data communication; Double heterojunction bipolar transistors; High speed integrated circuits; Indium gallium arsenide; Indium phosphide; Integrated circuit manufacture; Integrated circuit technology; Pulp manufacturing;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
