Title :
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range
Author :
Xin Zhu ; Jing Wang ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
InP/GaAs/sub 0.51/Sb/sub 0.49//InP DHBT (double heterojunction bipolar transistor) technology is investigated and presented for low power consumption and high power microwave amplification. A low power monolithic transimpedance circuit using InP/GaAsSb/InP DHBTs presented a 11.0 dB gain, 9.5 GHz bandwidth, 46 dB/spl Omega/ transimpedance, and a corresponding gain-bandwidth of 1.880 THz-/spl Omega/. The power characteristics of the DHBT devices have not been discussed extensively in the past and are shown here to present large 1 dB-compressed output power corresponding to 0.76 mW//spl mu/m/sup 2/ at 5 GHz and high efficiency due to the use of an InP collector. This opens the possibility for transimpedance amplifier use in applications where an input signal with large dynamic range may be present.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave amplifiers; power amplifiers; wide band gap semiconductors; 1 dB; 11.0 dB; 5 GHz; 9.5 GHz; InP-GaAsSb-InP; double heterojunction bipolar transistor; monolithic transimpedance amplifier; power microwave amplification; Bandwidth; Circuits; DH-HEMTs; Double heterojunction bipolar transistors; Dynamic range; Energy consumption; Gain; Gallium arsenide; Indium phosphide; Microwave technology;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
