• DocumentCode
    2023160
  • Title

    Large Signal Modeling and Analysis of GaAs MESFET

  • Author

    Hwang, Vincent D. ; Itoh, Tatsuo

  • Author_Institution
    Dept. of Electrical and Computer Engineering, University of Texas, Austin, Texas 78712, U.S.A.
  • fYear
    1986
  • fDate
    8-12 Sept. 1986
  • Firstpage
    189
  • Lastpage
    194
  • Abstract
    For the first time, the modified mul tiple reflection technique is used for simulation of large signal performance of MESFET. The circuit elements and parameters are extracted with relatively small effort by systematically measuring the device S-parameters and DC current-voltage characteristics. The circuit model is then analyzed by the hybrid time-frequency domain iterative technique with accelerated convergence scheme. Fast convergence speed and accurate results have been obtained with this technique.
  • Keywords
    Circuit simulation; Convergence; Current measurement; Current-voltage characteristics; Gallium arsenide; MESFETs; Reflection; Scattering parameters; Signal analysis; Time frequency analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1986. 16th European
  • Conference_Location
    Dublin, Ireland
  • Type

    conf

  • DOI
    10.1109/EUMA.1986.334192
  • Filename
    4133675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2023160