Large Signal Modeling and Analysis of GaAs MESFET

For the first time, the modified mul tiple reflection technique is used for simulation of large signal performance of MESFET. The circuit elements and parameters are extracted with relatively small effort by systematically measuring the device S-parameters and DC current-voltage characteristics. The circuit model is then analyzed by the hybrid time-frequency domain iterative technique with accelerated convergence scheme. Fast convergence speed and accurate results have been obtained with this technique.